Impact of 100 MeV Au on the surface of relaxed Si_0.5Ge_0.5 alloy films studied by atomic force microscopyKANJILAL, A; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Surface science. 2006, Vol 600, Num 15, pp 3087-3092, issn 0039-6028, 6 p.Article

Diffusion of silicon in crystalline germaniumSILVESTRI, H. H; BRACHT, H; LUNDSGAARD HANSEN, J et al.Semiconductor science and technology. 2006, Vol 21, Num 6, pp 758-762, issn 0268-1242, 5 p.Article

Morphological properties of laser irradiated Si/Ge multilayersGAIDUK, P. I; PRAKOPYEU, S. L; LUNDSGAARD HANSEN, J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4701-4704, issn 0921-4526, 4 p.Conference Paper

Ge nanocrystals in magnetron sputtered SiO₂SKOV JENSEN, J; LEERVAD PEDERSEN, T. P; PEREIRA, R et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 83, Num 1, pp 41-48, issn 0947-8396, 8 p.Article

Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growthLUNDSGAARD HANSEN, J; SHIRYAEV, S. YU; THOMSEN, E. V et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 317-322, issn 0022-0248Conference Paper

Simultaneous diffusion of Si and Ge in isotopically controlled Si _1-xGe_x heterostructuresKUBE, R; BRACHT, H; LUNDSGAARD HANSEN, J et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 378-383, issn 1369-8001, 6 p.Conference Paper

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structuresGAIDUK, P. I; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Microelectronic engineering. 2014, Vol 125, pp 8-13, issn 0167-9317, 6 p.Conference Paper

Dislocation patterning and nanostructure engineering in compositionally graded Si_1-xGe_x/Si layer systemsSHIRYAEV, S. YU; JENSEN, F; WULFF PETERSEN, J et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 132-136, issn 0022-0248Conference Paper